The origins and limits of metal-graphene junction resistance.

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Graphene Transistors: Status, Prospects, and Problems (2013, background): “Since then, significant progress could be made, and, meanwhile, contact resistances in the 100– 200- m range have been demonstrated [79], [80].”
Channel length scaling of MoS2 MOSFETs. (2012, background): “This is attributed to a larger contact resistance on MoS2 at lower gate bias, leading to a larger absolute error, which is also observed in former graphene TLM study.(17) Generally, the gate dependence of Rc can be attributed to two reasons: one is the existence of a Schottky barrier at the metal/ s”
The role of contact resistance in graphene field-effect devices (2017, background): “Pd/Au (20/60) E-Beam CVD 2p/4p 88 Laser cleaning of contact area [136] Pd/Au (25/25) Exfoliated TLM 230÷900 Bias dependent [98] Pd/Au (30/50) E-Beam Exfoliated TLM 69 [137] Pd/Au (5/50) E-Beam CVD TLM 122 Doping by PVP/PMF insulator [128]”
Production and processing of graphene and related materials (2020, background): “Metal induced doping can create p-n junctions from the SLG under the contact to the channel, which have to be taken into account in the resistance analysis [1625, 1626].”