Kelin J. Kuhn

Electrical and Electronic Engineering · 2007–2012

A researcher in the Science corpus: 5 papers; trusts 8 researchers and is trusted by 4 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 51 citations into it; #3,549 of 16,539 by trust here, #6,474 by citations
• Biomedical Engineering — 13 citations into it
• Materials Chemistry — 6 citations into it
• Atomic and Molecular Physics, and Optics — 5 citations into it

Whom Kelin J. Kuhn trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Massimo V. Fischetti
2. J. Larson
3. Isabelle Ferain
4. Seonghoon Jin
5. Roza Kotlyar
6. Peide D. Ye
7. Adelmo Ortiz-Conde
8. Yi Xuan
9. Neophytos Neophytou
10. J. D. del Alamo

Who trusts Kelin J. Kuhn overall

1. Qiang Li
2. Aaron Stillmaker
3. Kei May Lau
4. Bevan M. Baas

Papers from Kelin J. Kuhn's perspective

Ordered by how strongly the researchers Kelin J. Kuhn trusts endorse each paper. Same corpus, a different order for every researcher.

1. Review on high-k dielectrics reliability issues (IEEE transactions on device and materials reliability)
2. Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology (Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.)
3. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
4. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
5. Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks (IEEE transactions on device and materials reliability)
6. High-κ gate dielectrics: Current status and materials properties considerations
7. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
8. A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
9. Pi-Gate SOI MOSFET (IEEE Electron Device Letters)
10. Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness

Their papers

• Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm (2011) — 329 citations
• A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging (2007) — 872 citations
• Process Technology Variation (2011) — 348 citations
• Considerations for Ultimate CMOS Scaling (2012) — 612 citations
• BTI reliability of 45 nm high-K + metal-gate process technology (2008) — 133 citations