Graphene nano-ribbon electronics

By Zhihong Chen, Yu-ming Lin, M. Rooks, Phaedon Avouris. 2007

1,400 citations recorded by the source corpus.

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/86daf801372fc22dda5065d3036a7a640c8591e9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. N. M. R. Peres
  2. K. Novoselov
  3. E. Rossi
  4. E. Hwang
  5. S. Adam
  6. Francisco Guinea
  7. A.K. Geim
  8. A. C. Castro Neto

In Electrical and Electronic Engineering

  1. N. M. R. Peres
  2. K. Novoselov
  3. O. Yazyev
  4. E. Hwang
  5. A.K. Geim
  6. Francisco Guinea
  7. A. C. Castro Neto
  8. Alexander A. Balandin

In Materials Chemistry

  1. N. M. R. Peres
  2. K. Novoselov
  3. Phaedon Avouris
  4. E. Hwang
  5. E. Rossi
  6. S. Adam
  7. Francisco Guinea
  8. A. C. Castro Neto

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