Graphene nano-ribbon electronics
By Zhihong Chen, Yu-ming Lin, M. Rooks, Phaedon Avouris. 2007
1,400 citations recorded by the source corpus.
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/86daf801372fc22dda5065d3036a7a640c8591e9
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- N. M. R. Peres
- K. Novoselov
- O. Yazyev
- E. Hwang
- A.K. Geim
- Francisco Guinea
- A. C. Castro Neto
- Alexander A. Balandin
In Materials Chemistry
- N. M. R. Peres
- K. Novoselov
- Phaedon Avouris
- E. Hwang
- E. Rossi
- S. Adam
- Francisco Guinea
- A. C. Castro Neto
Citations in the corpus
- Production, properties and potential of graphene (2010, methodology): “[197] Chen ZH, Lin YM, Rooks MJ, Avouris P.”
- Carbon-based electronics. (2007, background): “This confinement should open a gap and make the GNR a finite gap semiconducto”
- Impact of Size Effect on Graphene Nanoribbon Transport (2010, methodology): “Also plotted are 7 data points from previously published work [3, 13, 15].”