The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition

By Han Liu, Kun Xu, Xujie Zhang, Peide D. Ye. 2012

162 citations recorded by the source corpus.

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the crystal surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones potentials, which could guide future optimization of the ALD process on 2D crystals.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/59d310890e8b1be178cea333ff55ff8f0fb33532

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In Electrical and Electronic Engineering

1. Yuchen Du
2. Han Liu
3. A. Neal
4. Peide D. Ye
5. Mengwei Si

In Materials Chemistry

1. Yuchen Du
2. Peide D. Ye
3. Han Liu
4. A. Neal
5. Mengwei Si

Citations in the corpus

• Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances (2013, background): “2277311 materials [23], [24]; 3) reducing contact resistance [25]; and”