Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

By Yi Xuan, Yanqing Wu, T. Shen, Minghao Qi, M. Capano, J. A. Cooper, Peide D. Ye. 2008

225 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8ea084399e4e3ab6e22b19e9633e738957423fd9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Han Liu
2. Peide D. Ye

In Materials Chemistry

1. Han Liu
2. Peide D. Ye
3. He Shen
4. Zhijun Zhang
5. Liming Zhang
6. Min Liu

Citations in the corpus

• $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric (2011, background): “This is understood by the fact that dangling bonds only exist in graphene edges but not on the basal plane [11,12].”
• Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates (2009, background): “While the gate leakage current is very low, the direct growth of Al2O3 by ALD indicates potential interface states in the epitaxially grown graphene layer [12].”
• Biomedical Applications of Graphene (2012, background): “With the rapid deveolopment of synthesis and functionalization approches, graphene and its related derivatives have shown outstanding potentials in many fields, such as nanoelectronics [6], composite materials [7-11], energy technology (for examples, fuel cell, supercapacitor, hydrogen storage) [12-”