Chloride molecular doping technique on 2D materials: WS2 and MoS2.

By Lingming Yang, K. Majumdar, Han Liu, Yuchen Du, Heng Wu, M. Hatzistergos, P. Hung, R. Tieckelmann, W. Tsai, C. Hobbs and 1 more. Nano letters (Print), 2014

690 citations recorded by the source corpus.

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kΩ·μm and 0.5 kΩ·μm, respectively. The significant reduction of the Rc is attributed to the achieved high electron-doping density, thus a significant reduction of Schottky barrier width. As a proof-of-concept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 μA/μm, an on/off ratio of 4 × 10(6), and a peak field-effect mobility of 60 cm(2)/(V·s). This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nanoelectronic devices.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/385eefcdf013e34c23ffe74b9866780489dda1f3

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Citations in the corpus

Recent Advances in Two-Dimensional Materials beyond Graphene. (2015, background): “2 10(12) cm 2 were obtained, respectively.(230) A possible mechanism suggests that the doping may have been realized through the replacement of S vacancy with Cl atom.”
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, positive): “Moreover, the Cl doping technique can also be applied to other 2D semiconducting TMDCs such as WS2 [422].”
Solid Lubrication with MoS2: A Review (2019, methodology): “Halogens (F, Cl, Br, I) substituting on the S site have been calculated to have large formation energies, but perhaps substitution could occur by filling S vacancies [169], as suggested by experiments [186].”