High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

By Hong Zhou, Mengwei Si, Sami Alghamdi, G. Qiu, Lingming Yang, Peide D. Ye. IEEE Electron Device Letters, 2016

239 citations recorded by the source corpus.

In this letter, we report on high-performance depletion/enhancement-mode β-Ga₂O₃ on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (I_D) of 600/450 mA/mm, which are nearly one order of magnitude higher than any other reported I_D values. The threshold voltage (V_T) can be modulated by varying the thickness of the β-Ga₂O₃ films and the E-mode GOOI FET can be simply achieved by shrinking the β-Ga₂O₃ film thickness. Benefiting from the good interface between β-Ga₂O₃ and SiO₂ and wide bandgap of β-Ga₂O₃, a negligible transfer characteristic hysteresis, high I_D ON/OFF ratio of 10¹⁰, and low subthreshold swing of 140 mV/decade for a 300-nm-thick SiO₂ are observed. E-mode GOOI FET with source to drain spacing of 0.9-μm demonstrates a breakdown voltage of 185 V and an average electric field (E) of 2 MV/cm, showing the great promise of GOOI FET for future power devices.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/eaf21b8abd023e61f6ae0c8896854190e3cbd8cb

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Citations in the corpus

• Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, methodology): “Other reported methods to achieve E-mode transistor operation include using very thin heavily-doped nano-membranes [11], recessed-gate [14], vertical moderatelydoped Fins [12] and FETs with unintentionally doped channels and ion-implanted source and drain [15].”
• Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage (2020, unknown): “densities have also been reported [20].”
• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “involves reactive ion etching (RIE) with pure BCl3 or Ar/BCl3, inductively coupled plasma (ICP) etching using pure BCl3 or Ar/BCl3, UV/O3 treatment [143] and Ar plasma bombardment [17], [136], [137].”
• $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (2017, unknown): “published result for β-Ga2O3 [7], [18].”