A critical review of recent progress on negative capacitance field-effect transistors

By M. A. Alam, Mengwei Si, Peide D. Ye. Applied Physics Letters, 2019

180 citations recorded by the source corpus.

The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to explore the physics and technology of negative capacitance field effect transistor (NC-FET). Although hundreds of papers have been published, the validity of quasi-static NC and the frequency-reliability limits of NC-FET are still being debated. The concept of NC - if conclusively demonstrated - will have broad impacts on device physics and technology development. Here, the authors provide a critical review of recent progress on NC-FETs research and some starting points for a coherent discussion.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/da4cd2599168473370860219696de86b63437fa7

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In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Slesazeck
4. Min Hyuk Park
5. Tony Schenk

Citations in the corpus

• The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “If the region between the two stable polarization states can be stabilized, a negative differential capacitance region could be achieved that allows voltage amplification [87] and reduces the subthreshold swing and can increase the drive current [88].”