Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

By H. Lin, Peide D. Ye, G. Wilk. 2005

250 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/bb9a28b5d7c4a1b9c26d6f1f04c1118b3568026c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Peide D. Ye
2. Yi Xuan

In Materials Chemistry

1. Peide D. Ye

Citations in the corpus

• Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric (2007, background): “[21] The disadvantage for Al2O3 is its relative low-κ value compared to other high-κ materials.”