J. D. del Alamo
Electrical and Electronic Engineering · 2001–2014
A researcher in the Science corpus: 10 papers; trusts 7 researchers and is trusted by 16 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 56 citations into it; #2,265 of 16,539 by trust here, #5,738 by citations
- Condensed Matter Physics — 25 citations into it; #737 of 1,948 by trust here, #778 by citations
- Materials Chemistry — 19 citations into it; #10,769 of 11,513 by trust here, #10,245 by citations
- Electronic, Optical and Magnetic Materials — 10 citations into it; #2,628 of 2,886 by trust here, #2,416 by citations
Whom J. D. del Alamo trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts J. D. del Alamo overall
- Qiang Li
- Han Liu
- Kei May Lau
- Jungwoo Joh
- Enrico Zanoni
- Filippo Giubileo
- D. Fleetwood
- Matteo Meneghini
- Peide D. Ye
- Kelin J. Kuhn
Papers from J. D. del Alamo's perspective
Ordered by how strongly the researchers J. D. del Alamo trusts endorse each paper. Same corpus, a different order for every researcher.
- Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
- Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (International Electron Devices Meeting)
- Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (IEEE Transactions on Electron Devices)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (IEEE Electron Device Letters)
- Thermal resistance calculation of AlGaN-GaN devices (IEEE transactions on microwave theory and techniques)
- Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (IEEE Transactions on Electron Devices)
- AlGaN/GaN HFET reliability (IEEE Microwave Magazine)
- TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs (IEEE Electron Device Letters)
Their papers
- Nanometre-scale electronics with III–V compound semiconductors (2011) — 1,264 citations
- GaN HEMT reliability (2009) — 503 citations
- TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs (2008) — 167 citations
- Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors (2008) — 305 citations
- Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors (2010) — 175 citations
- A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011) — 402 citations
- 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz (2008) — 186 citations
- III–V compound semiconductor transistors—from planar to nanowire structures (2014) — 220 citations
- The iLab Shared Architecture: A Web Services Infrastructure to Build Communities of Internet Accessible Laboratories (2008) — 435 citations
- An insulator-lined silicon substrate-via technology with high aspect ratio (2001) — 154 citations