Graphene transistors.

By Frank Schwierz. Nature Nanotechnology, 2010

3,215 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b6da2b99c539711a8023f2384c8de202dbc6742e

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Mechanical properties of graphene and graphene-based nanocomposites (2017, background): “The list of potential applications includes high-end composite materials [6,7], field effect transistors [8], electromechanical sys-”
Low-frequency 1/f noise in graphene devices. (2013, background): “The prospects of highfrequency graphene transistors for communication, which rely on its high  and vS also look promising [15-17].”
Two-Dimensional Materials for Thermal Management Applications (2018, background): “In addition, these atomically thin materials show goodmechanical properties and flatness due to their 2D nature, making them promising candidates for next-generation flexible electronic devices.(20,21) Impressively, it has been demonstrated that graphene shows ultrahigh thermal conductivity of 4,800”
First principles study of two-dimensional early transition metal carbides (2012, background): “Two-dimensional (2-D) materials have a broad range of applications, ranging from nanoelectronic circuits([1,2]) and energy storage systems([3,4]) to reinforcement in composites.”
Towards full repair of defects in reduced graphene oxide films by two-step graphitization (2013, background): “Research activities have covered basic science aspects of this two-dimensional carbon material, to provide fundamental insight into its electronic, mechanical, thermal and optical properties [1, 2], as well as the exploration of its potential for different technologically relevant applications, for ”
Vertical Graphene Base Transistor (2011, background): “However, GFETs are not suitable for logic applications due to the absence of a bandgap, and the lack of a pronounced drain-current saturation limits their potential for conventional RF amplifying circuits [8], [9].”