Single-layer MoS2 transistors.
By B. Radisavljevic, A. Radenović, J. Brivio, V. Giacometti, Andras Kis. Nature Nanotechnology, 2011
13,222 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/2a91a1f6feb320fc652eb1bfa387eecb3b7cba93
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
- Hua Zhang
- Joshua E. Goldberger
- A. Di Bartolomeo
- Yury Gogotsi
- M. Chhowalla
- Rodney S. Ruoff
- Yu Huang
- Qing Zhang
In Materials Chemistry
- Hua Zhang
- Yong‐Wei Zhang
- Yury Gogotsi
- Gang Zhang
- K. Novoselov
- A. Di Bartolomeo
- M. Chhowalla
- Mark C. Hersam
Citations in the corpus
- Strain effects on thermoelectric properties of two-dimensional materials (2015, background): “Hence, monolayer MoS2 is regarded as a promising candidate for field effect transistor with an ultra-high on/off ratio [68, 69].”
- On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit (2013, background): “The first successful demonstration of single-layer MoS2 transistors was report in 2010 [7].”