The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
By Han Liu, A. Neal, Mengwei Si, Yuchen Du, Peide D. Ye. IEEE Electron Device Letters, 2014
151 citations recorded by the source corpus.
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high ON-current of 144 mA/mm and hole mobility of 95.6 cm2/V·s. We deposit Al2O3 by atomic layer deposition (ALD) and study the effects of dielectric capping. We observe that the polarity of the transistors alternated from p-type to ambipolar with Al2O3 grown on the top. We attribute this transition to the changes for the effective Schottky barrier heights for both electrons and holes at the metal contact edges, which is originated from fixed charges in the ALD dielectric.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ba8546b82ab425a378cb4307c04c3abc8ce93bd8
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Citations in the corpus
- Modulation of electronic and mechanical properties of phosphorene through strain (2014, background): “ir applications as asserted in field-effect transistors based on multilayers of this material [9,12–17].”
- Environmental instability of few-layer black phosphorus (2014, background): “[6] Han Liu, Adam T Neal, Mengwei Si, Yuchen Du, and Peide D Ye.”