Energy band-gap engineering of graphene nanoribbons.

By Melinda Y. Han, B. Ozyilmaz, Yuanbo Zhang, Philip Kim. Physical Review Letters, 2007

4,480 citations recorded by the source corpus.

We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/92266f110426c6bfcd4eb362399d02bcc9c7db49

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Simulation of Graphene Nanoribbon Field-Effect Transistors (2007, background): “Energy gap can however be induced by means of lateral confinement [4], realized for example by lithography defini-”
Impact of Size Effect on Graphene Nanoribbon Transport (2010, background): “total mobility versus linewidth (Fig. 2). Also shown for reference are a few previously published results with W 3 ], [13], [15].”