Channel length scaling of MoS2 MOSFETs.

By Han Liu, A. Neal, Peide D. Ye. ACS Nano, 2012

785 citations recorded by the source corpus.

In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS(2) two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We compare the short channel behavior of sets of MOSFETs with various channel thickness, and reveal the superior immunity to short channel effects of MoS(2) transistors. We observe no obvious short channel effects on the device with 100 nm channel length (L(ch)) fabricated on a 5 nm thick MoS(2) 2D crystal even when using 300 nm thick SiO(2) as gate dielectric, and has a current on/off ratio up to ~10(9). We also observe the on-current saturation at short channel devices with continuous scaling due to the carrier velocity saturation. Also, we reveal the performance limit of short channel MoS(2) transistors is dominated by the large contact resistance from the Schottky barrier between Ni and MoS(2) interface, where a fully transparent contact is needed to achieve a high-performance short channel device.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3e1e218537fd12da2e696d02c170eb2deaca2be9

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Citations in the corpus

Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances (2013, background): “To improve the device performance, recent research on MoS2 field-effect transistors (FETs) has been mostly focusing on the following issues: 1) scaling down the device dimensions [22]; 2) top-gating devices with high-k”
Isolation and characterization of few-layer black phosphorus (2014, result): “This is consistent with reports on MoS2 transistors and silicon devices with short channels where the contact resistance has an stronger effect in the total resistance of the devices and the carrier velocity saturates resulting in lower estimated mobilities [47].”
Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. (2012, background): “3 / 18 Atomically thin sheets of MoS2 consisting of a single to a few monolayers were recently found to exhibit a set of unusual properties associated with its two dimensional (2D) structure and high crystal quality, triggering significant research interest.(1-18) Similar to graphite, MoS2 crystalli”
Few-layer MoS2: a promising layered semiconductor. (2014, background): “Due to its 2D structure, MoS2 is much more resistant to short channel effects as compared to silicon, showing excellent drain-induced barrier lowering (DIBL) of about 10 mV/V,(201) making it theoretically possible to drive down channel length in MoS2 FETs to sub-10 nm dimensions while having respect”
Electrical characterization of 2D materials-based field-effect transistors (2020, methodology): “However, in many cases, the contact resistance in back-gated 2D FETs is either comparable to or higher than the channel resistance, resulting in significant errors in the RCH value extracted using 2PP measurements [72].”
Two-dimensional semiconductors with possible high room temperature mobility (2014, background): “Field effect transistors based on 2D materials are promising because it can overcome the shorted-channel effect, which is one of the biggest obstacles of further decrease of the dimensions of semiconductors [4].”