Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

By Leitao Liu, S. Kumar, Y. Ouyang, Jing Guo. IEEE Transactions on Electron Devices, 2011

437 citations recorded by the source corpus.

The performance limits of monolayer transition metal dichalcogenide ( MX₂) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX₂. We find the lattice structures of monolayer MX₂ remain the same as the bulk MX₂. Within the ballistic regime, the performances of monolayer MX₂ transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX₂ promising 2-D materials for future nanoelectronic device applications.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/dabb69fc0db22d7a49ce35cbe14e410fdf03fd39

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Materials Chemistry

1. Frank Schwierz
2. Yuchen Du
3. Peide D. Ye
4. Han Liu
5. A. Neal
6. Roger K. Lake
7. K. Alam
8. Mengwei Si

Citations in the corpus

• On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit (2013, methodology): “566 m0 in the transverse direction, where m0 is the free electron mass [10].”