G. Wilk

Electrical and Electronic Engineering · 2000–2006

A researcher in the Science corpus: 15 papers; trusts 1 researcher and is trusted by 13 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 34 citations into it; #2,826 of 16,539 by trust here, #1,541 by citations
• Atomic and Molecular Physics, and Optics — 8 citations into it; #2,284 of 7,135 by trust here, #677 by citations

Whom G. Wilk trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Robert M. Wallace
2. Peide D. Ye

Who trusts G. Wilk overall

1. John Robertson
2. D. Fleetwood
3. R. Lacoe
4. Evgeni P. Gusev
5. Debashish Panda
6. Peide D. Ye
7. Paul C. McIntyre
8. Yi Xuan
9. Robert M. Wallace
10. Sufi Zafar

Papers from G. Wilk's perspective

Ordered by how strongly the researchers G. Wilk trusts endorse each paper. Same corpus, a different order for every researcher.

1. Single-layer MoS2 transistors. (Nature Nanotechnology)
2. Atomically thin MoS₂: a new direct-gap semiconductor. (Physical Review Letters)
3. Studying disorder in graphite-based systems by Raman spectroscopy. (Physical Chemistry, Chemical Physics - PCCP)
4. Renormalization of molecular electronic levels at metal-molecule interfaces. (Physical Review Letters)
5. Defect engineering of two-dimensional transition metal dichalcogenides
6. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26% (Nature Energy)
7. A hybrid neural network‐first principles approach to process modeling
8. Tunable photoluminescence of monolayer MoS₂ via chemical doping. (Nano letters (Print))
9. Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors. (Nature Materials)
10. Two-dimensional flexible nanoelectronics (Nature Communications)

Their papers

• High-κ gate dielectrics: Current status and materials properties considerations (2001) — 5,517 citations
• Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers (2002) — 264 citations
• GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition (2003) — 243 citations
• High-κ Dielectric Materials for Microelectronics (2003) — 188 citations
• HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition (2005) — 309 citations
• Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition (2004) — 140 citations
• Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs (2005) — 250 citations
• Hafnium and zirconium silicates for advanced gate dielectrics (2000) — 940 citations
• Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric (2006) — 151 citations
• GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric (2005) — 493 citations
• GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition (2003) — 310 citations
• Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides (2003) — 144 citations
• Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition (2003) — 181 citations
• Alternative Gate Dielectrics for Microelectronics (2002) — 141 citations
• Stable zirconium silicate gate dielectrics deposited directly on silicon (2000) — 309 citations