Top-gated graphene field-effect-transistors formed by decomposition of SiC

By Yanqing Wu, Peide D. Ye, M. Capano, Yi Xuan, Y. Sui, Minghao Qi, James A. Cooper, T. Shen, Deepak Pandey, G. Prakash and 1 more. 2008

219 citations recorded by the source corpus.

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions’ unique transport properties in graphene layers. The measured electron and hole mobilities on these fabricated graphene FETs are as high as 5400 and 4400cm2∕Vs, respectively, which are much larger than the corresponding values from conventional SiC or silicon.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/08607c0e8661d8c2a9f56c61282429797c45bd80

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In Materials Chemistry

1. A. Mahmood
2. E. Dujardin
3. C. Soldano
4. T. Iakimov
5. T. Echtermeyer
6. L. Hultman
7. A.K. Geim
8. K. Novoselov

Citations in the corpus

• Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm (2010, methodology): “While graphene field-effect mobility as high as 5400 cm(2)/V · s for electron has been demonstrated [5], it was achieved using six”
• Production, properties and potential of graphene (2010, background): “[75] Wu YQ, Ye PD, Capano MA, Xuan Y, Sui Y, Qi M, et al.”
• Nonvolatile Switching in Graphene Field-Effect Devices (2008, background): “, [4]–[8], and [17]) and translates to a channel resistivity of 5 kΩ [labeled “ON-state” in Fig.”
• Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection (2011, background): “Furthermore, n-p transitions for a top gated FET structure fabricated from single layer graphene on the Si face of SiC have been reported when the gate voltage was swept to below -20 V [23].”