Gennadi Bersuker

Electrical and Electronic Engineering · 2004–2015

A researcher in the Science corpus: 11 papers; trusts 2 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom Gennadi Bersuker trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. M. A. Alam
  2. Souvik Mahapatra

Who trusts Gennadi Bersuker overall

  1. Federico Nardi
  2. Daniele Ielmini

Papers from Gennadi Bersuker's perspective

Ordered by how strongly the researchers Gennadi Bersuker trusts endorse each paper. Same corpus, a different order for every researcher.

  1. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  2. High dielectric constant gate oxides for metal oxide Si transistors
  3. Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
  4. Random Circuit Breaker Network Model for Unipolar Resistance Switching
  5. Vacancy and interstitial defects in hafnia
  6. Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films (IEEE Electron Device Letters)
  7. Metal oxide RRAM switching mechanism based on conductive filament microscopic properties (International Electron Devices Meeting)
  8. Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity (International Electron Devices Meeting)
  9. Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (IEEE Transactions on Electron Devices)
  10. Metal–Oxide RRAM (Proceedings of the IEEE)

Their papers