Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

By Hans Reisinger, O. Blank, W. Heinrigs, A. Muhlhoff, Wolfgang Gustin, C. Schlunder. 2006 IEEE International Reliability Physics Symposium Proceedings, 2006

281 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/cfb765786c1c63d3b342467ec2153f29498b0ef4

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “Similar attempts to model NBTI stress data with uncorrelated ΔNIT and ΔNHT were also made in [6] and [23].”
A two-stage model for negative bias temperature instability (2009, methodology): “We rule out this variant based on the various known shortcomings of RD theory [2, 4, 15].”
Review and Reexamination of Reliability Effects Related to NBTI-Induced Statistical Variations (2007, background): “2) It is now recognized that there are concurrent interface state repassivation (a prominent feature of the Reaction-Diffusion Model [26]), and oxide trap detrapping processes occurring (as shown by fast recovery effects [27]).”
On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007, methodology): “Note that our analysis is different from [5],[10], where significant hole trapping (log time dependence) is used together with R-D model (atomic H diffusion, power law time dependence with n=0.”
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “already in full flight in measurements taken on the microseconds timescale [18], [33], independently of the stress time.”
Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation (2007, methodology): “However, there is a perception in recent reports [6], [19] that fast transient recovery of NBTI is inconsistent with the classical R-D model [19], [31].”
Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008, background): “The ΔVth relaxation is typically observed to span many decades in time, from microseconds or possibly less [2,3] to days (Fig.”