Jungwoo Joh
Condensed Matter Physics · 2006–2011
A researcher in the Science corpus: 7 papers; trusts 5 researchers and is trusted by 7 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 27 citations into it; #324 of 1,948 by trust here, #569 by citations
- Electrical and Electronic Engineering — 22 citations into it; #3,244 of 16,539 by trust here, #7,892 by citations
- Materials Chemistry — 7 citations into it; #10,770 of 11,513 by trust here, #10,245 by citations
- Electronic, Optical and Magnetic Materials — 6 citations into it; #499 of 2,886 by trust here, #2,260 by citations
Whom Jungwoo Joh trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Gaudenzio Meneghesso
- J. D. del Alamo
- P. Klein
- A. Sarua
- Giovanni Verzellesi
- Martin Kuball
- Thomas E. Kazior
Who trusts Jungwoo Joh overall
- J. D. del Alamo
- Enrico Zanoni
- Matteo Meneghini
- Gaudenzio Meneghesso
- Alessandro Chini
- B. Baliga
- Denis Marcon
Papers from Jungwoo Joh's perspective
Ordered by how strongly the researchers Jungwoo Joh trusts endorse each paper. Same corpus, a different order for every researcher.
- Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (International Electron Devices Meeting)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (IEEE Transactions on Electron Devices)
- Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
- Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures (IEEE Transactions on Electron Devices)
- A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (IEEE Electron Device Letters)
- Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (IEEE Transactions on Electron Devices)
Their papers
- Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (2006) — 215 citations
- GaN HEMT reliability (2009) — 503 citations
- TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs (2008) — 167 citations
- Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors (2008) — 305 citations
- Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors (2010) — 175 citations
- A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011) — 402 citations
- Measurement of Channel Temperature in GaN High-Electron Mobility Transistors (2009) — 177 citations