Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

By A. Sarua, H. Ji, Martin Kuball, Michael J. Uren, Trevor Martin, K. Hilton, R. Balmer. IEEE Transactions on Electron Devices, 2006

249 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6cc3ee954876789b35a69ef8ead4df68d0d19b03

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Jungwoo Joh
2. Martin Kuball
3. J. D. del Alamo
4. Gaudenzio Meneghesso
5. Enrico Zanoni
6. Matteo Meneghini

In Electrical and Electronic Engineering

1. Jungwoo Joh
2. K. Hilton
3. Liwu Zhang
4. Martin Kuball
5. H. Ji
6. A. Sarua
7. J. D. del Alamo
8. Gaudenzio Meneghesso

In Materials Chemistry

1. K. Hilton
2. Liwu Zhang
3. Martin Kuball
4. Marko J. Tadjer
5. Jungwoo Joh
6. D. Wolverson
7. H. Ji
8. A. Sarua

Citations in the corpus

• Raman Techniques: Fundamentals and Frontiers (2019, background): “Conventional thermal characterisation approaches such as infrared thermography are often no longer applicable for the accurate characterisation of high-power density devices due to limited spatial resolution which can result in the underestimation of the device peak temperature [239].”
• Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “Besides, some techniques, such as infrared thermography, have a poor spatial resolution of ∼5–10 μm [89], and many thermography approaches cannot be applied to packaged devices.”
• Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices (2007, methodology): “In addition, the thermal conductivity determined here of 4H-SiC substrate 420 W · m−1 · K−1 is higher than 330 W · m−1 · K−1 used in previous works [7]–[9], which neglected the presence of TBR.”
• Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure (2010, methodology): “Device temperatures were measured by Raman thermography [9], achieving a temperature accuracy of better than ±5 ◦C,”
• Measurement of Channel Temperature in GaN High-Electron Mobility Transistors (2009, methodology): “Optical temperature-measurement techniques such as infrared thermal imaging and micro Raman spectroscopy [ 2 ] are often used but they have several limitations.”