Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

By Jungwoo Joh, J. A. D. Alamo. International Electron Devices Meeting, 2006

215 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/742f67d0bf36e7ff87abecd8214cf279957630e5

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In Condensed Matter Physics

In Electrical and Electronic Engineering

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors (2008, methodology): “In this letter, we study in detail one of our most significant findings in [7]: the observation of a critical voltage for electrical degradation.”
Measurement of Channel Temperature in GaN High-Electron Mobility Transistors (2009, methodology): “In order to prevent device degradation and introduction of current collapse, in all our measurements, VDS was limited to 10 V—a value that has been separately tested to be adequately benign in these devices [11].”
Gallium nitride devices for power electronic applications (2013, background): “piezoelectric effect [49] resulting from the high electric field”
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008, background): “reason, GaN-HEMT reliability has started being addressed by an increasing number of works [1]–[16].”
AlGaN/GaN HFET reliability (2009, background): “Physically observed changes in the device include a defect generation process that occurs under the gate at a critical high electric field [6].”
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, methodology): “Although fast components have also been reported [9], [10], the recovery time from current collapse is generally long (> 100 s or even a few days) [6], [7], [11], [12].”
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013, methodology): “After the first observation by Joh and del Alamo [33] this failure mode has been repeatedly observed, see for instance”
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (2008, background): “[41] P. Saunier, C. Lee, A. Balistreri, D. Dumka, J. Jimenez, H. Q. Tserng, M. Y. Kao, P. C. Chao, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, and M. Shur, “Progress in GaN performance and reliability,” in Proc.”
TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs (2008, background): “mechanical strain at the source-side edge [6], [7].”