Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

By Gaudenzio Meneghesso, Giovanni Verzellesi, R. Pierobon, F. Rampazzo, Alessandro Chini, Umesh K. Mishra, C. Canali, Enrico Zanoni. IEEE Transactions on Electron Devices, 2004

332 citations recorded by the source corpus.

Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements. Gate- and drain-lag effects characterized by time constants in the order of 10/sup -5/-10/sup -4/ s cause dispersion between dc and pulsed output characteristics when the gate or the drain voltage are pulsed. An activation energy of 0.3 eV is extracted from temperature-dependent gate-lag measurements. We show that two-dimensional numerical device simulations accounting only for polarization charges and donor-like traps at the ungated AlGaN surface can quantitatively reproduce all dispersion effects observed experimentally in the different pulsing modes, provided that the measured activation energy is adopted as the energetic distance of surface traps from the valence-band edge. Within this hypothesis, simulations show that surface traps behave as hole traps during transients, interacting with holes attracted at the AlGaN surface by the negative polarization charge.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/225f1a3f71fccf89c20934ad14ebffe9aa34f908

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In Atomic and Molecular Physics, and Optics

S. Karpov

In Condensed Matter Physics

In Electrical and Electronic Engineering

Citations in the corpus

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, methodology): “Although fast components have also been reported [9], [10], the recovery time from current collapse is generally long (> 100 s or even a few days) [6], [7], [11], [12].”
Measurement of Channel Temperature in GaN High-Electron Mobility Transistors (2009, background): “The small impact of current collapse on our thermal-resistance measurement is further justified by the fact that current collapse is known to be minimal when pulsing VDS in the ON-state [ 18 ], which is the case in our measurement.”
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, methodology): “transient measurements [11]–[19], [59]: the latter method is”
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (2007, methodology): “Another important aspect to add in these conclusions is a fact already reported in the literature [20]: it seems that no”