A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

By Jungwoo Joh, J. D. del Alamo. IEEE Transactions on Electron Devices, 2011

402 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7b5da0e4b215057abbb13155ee78366f78aabafa

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In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. Alessandro Chini
5. S. Karpov

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Alessandro Chini

Citations in the corpus

• Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014, background): “As described in [36] for noninteracting point defects, during a DCT measurement, the concentration of occupied defect states depends on the duration of the (trap) filling pulse (tp) according to the formula”
• Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, background): “60 eV, which is broadly detected in several works regarding both GaN Schottky diode and HEMT structures [14], [30]–[45], [73].”