Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices
By J. M. Tirado, J. Sánchez-Rojas, J. Izpura. IEEE Transactions on Electron Devices, 2007
226 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/d5be3c87335b7eea638b6329aa7430feb537e1e3
How researchers see this paper
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In Condensed Matter Physics
- Gaudenzio Meneghesso
- Matteo Meneghini
- Enrico Zanoni
- J. D. del Alamo
- Jungwoo Joh
- Umesh K. Mishra
- Alessandro Chini
- B. Baliga
In Electrical and Electronic Engineering
- Gaudenzio Meneghesso
- Matteo Meneghini
- Enrico Zanoni
- J. D. del Alamo
- Jungwoo Joh
- Umesh K. Mishra
- Alessandro Chini
- Kei May Lau
Citations in the corpus
- A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, methodology): “Although fast components have also been reported [9], [10], the recovery time from current collapse is generally long (> 100 s or even a few days) [6], [7], [11], [12].”
- Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method (2011, methodology): “3) Gate (drain) lag measurements [3], based on the analysis”