A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
By T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa. 2003
220 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/16338322f996b0e131edadd4a4ca9bf13791b9c2
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
- Gaudenzio Meneghesso
- Enrico Zanoni
- J. D. del Alamo
- Jungwoo Joh
- Giovanni Verzellesi
- Matteo Meneghini
- S. Karpov
In Electrical and Electronic Engineering
- Gaudenzio Meneghesso
- Enrico Zanoni
- J. D. del Alamo
- Jungwoo Joh
- Matteo Meneghini
- Kei May Lau
- Qiang Li
Citations in the corpus
- Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008, background): “reported to be suppressed by UV illumination in [1] and [4].”
- A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, methodology): “Various methods, such as deep-level transient spectroscopy (DLTS), gate-lag measurement, low-frequency noise measurement, and frequency-dependent gm dispersion and conductance analysis, have been used in GaN HEMTs to study their trapping behavior [3], [15], [19], [21]–[23].”
- Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs (2006, background): “ically observed in unpassivated AlGaN/GaN HEMTs [6], [9], [13].”