Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

By Jungwoo Joh, J. A. D. Alamo, Jose L. Jimenez, H. Tserng, T. Chou, U. Chowdhury. IEEE Transactions on Electron Devices, 2009

177 citations recorded by the source corpus.

In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures of merit (I Dmax and R ON) with a synchronized pulsed I -V setup. As our technique involves only electrical measurement, no special design in device geometry is required, and packaged devices can be measured. We apply this technique to different device structures and validate its sensitivity and robustness.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/f2c23de9c251bbddc83ae1b54788c6224bd974e5

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In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. Alessandro Chini
5. S. Karpov

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Alessandro Chini

In Electronic, Optical and Magnetic Materials

1. Matteo Meneghini
2. Enrico Zanoni
3. Gaudenzio Meneghesso
4. Alessandro Chini

Citations in the corpus

• Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, methodology): “5 W/mm) and the thermal resistance of the device (10 K mm/W) measured by means of the pulsed-current method described in [27].”