Martin Kuball
Electrical and Electronic Engineering · 2001–2019
A researcher in the Science corpus: 14 papers; trusts 5 researchers and is trusted by 14 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 53 citations into it; #3,932 of 16,539 by trust here, #4,807 by citations
- Condensed Matter Physics — 51 citations into it; #412 of 1,948 by trust here, #339 by citations
- Materials Chemistry — 40 citations into it; #9,425 of 11,513 by trust here, #7,310 by citations
Whom Martin Kuball trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Martin Kuball overall
Papers from Martin Kuball's perspective
Ordered by how strongly the researchers Martin Kuball trusts endorse each paper. Same corpus, a different order for every researcher.
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Modeling and Measuring the Effect of Refraction on the Depth Resolution of Confocal Raman Microscopy
- Temperature measurements of semiconductor devices - a review (Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545))
- Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures (IEEE Transactions on Electron Devices)
- Thermal conductivity of GaN films: Effects of impurities and dislocations
- Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
- Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
- Punch-through in short-channel AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
- Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
- Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
Their papers
- Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy (2003) — 189 citations
- Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy (2002) — 356 citations
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (2010) — 148 citations
- A study of the phase diagram of (K,Na,Li)NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy (2007) — 187 citations
- Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures (2006) — 249 citations
- Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control (2001) — 386 citations
- Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012) — 309 citations
- Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices (2007) — 277 citations
- Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping (2014) — 168 citations
- Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure (2010) — 169 citations
- Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration (2019) — 246 citations
- The 2018 GaN power electronics roadmap (2018) — 1,106 citations
- Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications (2015) — 171 citations
- Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section (2013) — 143 citations