Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy

189 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices (2007, background): “Index Terms—Field-effect transistors (FETs), Gallium compounds, high-electron mobility transistors (HEMTs), Raman spectroscopy, temperature measurements, thermal boundary resistance (TBR), thermal simulations.”
Thermal resistance calculation of AlGaN-GaN devices (2004, methodology): “As was pointed out in [13], several issues contribute to the difference between theory and experiment.”
Measurement of Channel Temperature in GaN High-Electron Mobility Transistors (2009, background): “though the thermal conductivity is, in general, temperature dependent, an almost linear relationship between temperature and power dissipation up to Tj = 140 ◦C was observed presumably due to a weak dependence [12].”
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013, methodology): “Because of the limitations of the experimental techniques used to study device thermal performance [4], [5], physicsbased modeling and simulation have become important for accurate device thermal management.”