Denis Marcon
Condensed Matter Physics · 2013–2018
A researcher in the Science corpus: 3 papers; trusts 2 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 35 citations into it
- Electrical and Electronic Engineering — 34 citations into it
- Electronic, Optical and Magnetic Materials — 18 citations into it
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Who trusts Denis Marcon overall
Papers from Denis Marcon's perspective
Ordered by how strongly the researchers Denis Marcon trusts endorse each paper. Same corpus, a different order for every researcher.
- Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (International Electron Devices Meeting)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- AlGaN/GaN HFET reliability (IEEE Microwave Magazine)
- TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs (IEEE Electron Device Letters)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (IEEE transactions on device and materials reliability)
- 40-W/mm Double Field-plated GaN HEMTs (Device Research Conference)
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures (Science)
Their papers
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (2015) — 190 citations
- AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013) — 136 citations
- The 2018 GaN power electronics roadmap (2018) — 1,106 citations