GaN HEMT reliability
By J. D. del Alamo, Jungwoo Joh. Microelectronics and reliability, 2009
503 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/c5426fcd168825dbe5ae99e3f79ba8587ff898f8
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
- Gaudenzio Meneghesso
- Matteo Meneghini
- Enrico Zanoni
- J. D. del Alamo
- Alessandro Chini
- Denis Marcon
- Jungwoo Joh
- S. Karpov
In Electrical and Electronic Engineering
- Matteo Meneghini
- Gaudenzio Meneghesso
- Enrico Zanoni
- J. D. del Alamo
- Alessandro Chini
- Denis Marcon
- Jungwoo Joh
- Kei May Lau
Citations in the corpus
- A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, background): “Moreover, it has been widely seen that the trapping effects increase after device degradation [11], [13]–[20].”
- A review of GaN HEMT broadband power amplifiers (2020, unknown): “The output power can be increased about four times when compared with GaAs, with the same transistor size [40–42].”
- Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling (2013, background): “been shown that high reverse gate voltage results in permanent structural breakdown [5].”
- AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013, background): “explained by proposing a new failure mechanism, identified as converse piezoelectric effect [33], [49], [60].”