Trapping effects in GaN and SiC microwave FETs

By S. Binari, P. Klein, Thomas E. Kazior. Proceedings of the IEEE, 2002

468 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a764d1f7a77b8e120001e2af108b5a029f7d85db

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In Condensed Matter Physics

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Citations in the corpus

Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “Considering a photon pumping process can rapidly release the trapped electrons [20], Tang et al.”
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012, background): “The second mechanism, and the subject of this paper, is the result of charge trapping in deep levels within the semi-insulating buffer [2].”
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008, background): “Gate-lag effects are generally attributed to surface traps [26].”
Measurement of Channel Temperature in GaN High-Electron Mobility Transistors (2009, background): “such as current collapse becomes significant when the device is biased at high voltage [16].”
A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, methodology): “The gate-lag and drain-lag measurements [3], [9], [10] and drain current DLTS technique [25] are good examples of current-”
High-temperature electronics - a role for wide bandgap semiconductors? (2002, background): “This important issue that can also impact wide bandgap devices operating at room temperature ambient is detailed in [ 65 ].”
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs (2006, background): “trapping effects at the device surface and/or in the buffer [16].”
Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (2007, background): “effects are threshold voltage shift [5], [16], current collapse [1], [2], [4], [5], [7]–[9], [11], [12], [14]–[16], reduction of”
Punch-through in short-channel AlGaN/GaN HFETs (2006, background): “DC measurements are always confused by thermal effects, and also by several trap-related effects which lead to phenomena such as current slump [10].”