Enrico Zanoni
Condensed Matter Physics · 2003–2018
A researcher in the Science corpus: 16 papers; trusts 7 researchers and is trusted by 3 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 140 citations into it; #1,122 of 1,948 by trust here, #425 by citations
- Electrical and Electronic Engineering — 108 citations into it; #12,595 of 16,539 by trust here, #7,062 by citations
- Electronic, Optical and Magnetic Materials — 51 citations into it
- Biomedical Engineering — 8 citations into it
Whom Enrico Zanoni trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Enrico Zanoni overall
Papers from Enrico Zanoni's perspective
Ordered by how strongly the researchers Enrico Zanoni trusts endorse each paper. Same corpus, a different order for every researcher.
- Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (International Electron Devices Meeting)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (IEEE Electron Device Letters)
- Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (IEEE Transactions on Electron Devices)
- A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
- AlGaN/GaN HFET reliability (IEEE Microwave Magazine)
- TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs (IEEE Electron Device Letters)
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
Their papers
- Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (2004) — 332 citations
- Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate (2016) — 150 citations
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (2008) — 634 citations
- Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013) — 396 citations
- A Review on the Reliability of GaN-Based LEDs (2008) — 260 citations
- AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013) — 136 citations
- Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method (2011) — 160 citations
- Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs (2006) — 169 citations
- Accelerated Life Test of High Brightness Light Emitting Diodes (2008) — 161 citations
- Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies (2013) — 392 citations
- The 2018 GaN power electronics roadmap (2018) — 1,106 citations
- Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014) — 168 citations
- Breakdown mechanisms in AlGaN/GaN HEMTs: An overview (2014) — 141 citations
- A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs (2010) — 261 citations
- Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008) — 139 citations
- Richardson’s constant in inhomogeneous silicon carbide Schottky contacts (2003) — 245 citations