Alessandro Chini
Condensed Matter Physics · 2004–2014
A researcher in the Science corpus: 6 papers; trusts 3 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 78 citations into it
- Electrical and Electronic Engineering — 54 citations into it
- Electronic, Optical and Magnetic Materials — 39 citations into it
Whom Alessandro Chini trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Alessandro Chini's perspective
Ordered by how strongly the researchers Alessandro Chini trusts endorse each paper. Same corpus, a different order for every researcher.
- Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (International Electron Devices Meeting)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (IEEE Electron Device Letters)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (IEEE Transactions on Electron Devices)
- AlGaN/GaN HFET reliability (IEEE Microwave Magazine)
- TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs (IEEE Electron Device Letters)
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (IEEE transactions on device and materials reliability)
- 40-W/mm Double Field-plated GaN HEMTs (Device Research Conference)
Their papers
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (2004) — 327 citations
- Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (2004) — 332 citations
- Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013) — 396 citations
- N-polar GaN epitaxy and high electron mobility transistors (2013) — 200 citations
- AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013) — 136 citations
- Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014) — 168 citations