Thomas E. Kazior
Condensed Matter Physics · 2002–2008
A researcher in the Science corpus: 2 papers; trusts 2 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 20 citations into it; #1,306 of 1,948 by trust here, #657 by citations
- Electrical and Electronic Engineering — 19 citations into it; #11,071 of 16,539 by trust here, #7,520 by citations
Whom Thomas E. Kazior trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Thomas E. Kazior overall
Papers from Thomas E. Kazior's perspective
Ordered by how strongly the researchers Thomas E. Kazior trusts endorse each paper. Same corpus, a different order for every researcher.
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
- AlGaN/GaN HEMTs-an overview of device operation and applications (Proceedings of the IEEE)
- High-power AlGaN/GaN HEMTs for Ka-band applications (IEEE Electron Device Letters)
- 40-W/mm Double Field-plated GaN HEMTs (Device Research Conference)
Their papers
- Trapping effects in GaN and SiC microwave FETs (2002) — 468 citations
- GaN-Based RF Power Devices and Amplifiers (2008) — 1,645 citations