TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

By U. Chowdhury, J. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balistreri, Seong-Yong Park, Taehun Lee, J. Wang, M. Kim and 2 more. IEEE Electron Device Letters, 2008

167 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/be4786f964708f5b48e442aaec2015c44e20a08d

How researchers see this paper

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In Biomedical Engineering

1. Matteo Meneghini
2. Enrico Zanoni
3. Gaudenzio Meneghesso
4. Qiang Li
5. Kei May Lau

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Matteo Meneghini
3. Enrico Zanoni
4. J. D. del Alamo
5. Alessandro Chini
6. Denis Marcon
7. Jungwoo Joh
8. S. Karpov

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. J. D. del Alamo
5. Alessandro Chini
6. Denis Marcon
7. Jungwoo Joh
8. Kei May Lau

Citations in the corpus

• AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013, background): “submitted to operating life tests or reverse bias tests at high drain voltages [40], [41], [43], [65]–[69].”
• GaN HEMT reliability (2009, background): “In addition, the level of crystallographic damage correlates with the degradation in the electrical characteristics of the device [28].”