Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

By Masataka Higashiwaki, K. Konishi, Kohei Sasaki, K. Goto, K. Nomura, Q. Thieu, R. Togashi, Hisashi Murakami, Yoshinao Kumagai, B. Monemar and 3 more. 2016

318 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d909ee622bff88ca8c35f9ee6661f6624fd713a6