David L. Blackburn

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) · 2004

A researcher in the Science corpus: 1 paper; trusts 7 researchers and is trusted by 10 researchers here, as inferred from the citation graph.

Whom David L. Blackburn trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Martin Kuball
2. J. Hayes
3. D. Cahill
4. Michael J. Uren

Who trusts David L. Blackburn overall

1. Yvan Avenas
2. A. Sarua
3. Laurent Dupont
4. H. Ji
5. Zoubir Khatir
6. Nick Baker
7. Martin Kuball

Papers from David L. Blackburn's perspective

Ordered by how strongly the researchers David L. Blackburn trusts endorse each paper. Same corpus, a different order for every researcher.

1. Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy (IEEE Electron Device Letters)
2. Thermometry and Thermal Transport in Micro/Nanoscale Solid-State Devices and Structures
3. SOI thermal impedance extraction methodology and its significance for circuit simulation
4. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
5. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
6. Modeling and Measuring the Effect of Refraction on the Depth Resolution of Confocal Raman Microscopy
7. Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
8. Temperature measurements of semiconductor devices - a review (Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545))
9. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
10. Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

Their papers

• Temperature measurements of semiconductor devices - a review (2004) — 332 citations