Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

By A. Sarua, H. Ji, K. Hilton, D. Wallis, M. Uren, T. Martin, Martin Kuball. IEEE Transactions on Electron Devices, 2007

277 citations recorded by the source corpus.

Subfields: Civil and Structural Engineering, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/09bca9c9119785ab11ba3554cd087655d54e4ee0

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In Condensed Matter Physics

1. Martin Kuball

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Citations in the corpus

• Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure (2010, methodology): “fact an order of magnitude lower than the recently reported experimental values for the GaN–substrate interface [6], [7].”