Thermal conductivity of GaN films: Effects of impurities and dislocations

By J. Zou, D. Kotchetkov, Alexander A. Balandin, D. I. Florescu, F. Pollak. 2002

327 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/916427ee55e72c33efdd6ef03b4493f04ba43577

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Stanislav Vitanov
2. Rüdiger Quay
3. Stephan Maroldt
4. Vassil Palankovski

In Condensed Matter Physics

1. Martin Kuball
2. Stanislav Vitanov
3. Rüdiger Quay
4. Stephan Maroldt
5. Vassil Palankovski

In Materials Chemistry

1. K. Hilton
2. Martin Kuball
3. H. Ji
4. A. Sarua

Citations in the corpus

• High-temperature modeling of AlGaN/GaN HEMTs (2009, methodology): “Based on various studies [35,36,38–41] we give two parameter sets in Table 2, applicable for different material quality.”
• Gallium Nitride as an Electromechanical Material (2014, background): “The thermal conductivity shows an inverse relation with the doping and impurity concentration [46], [47].”
• Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure (2010, background): “Microstructure includes dislocations, grain boundaries, and point defects (impurity atoms and vacancies) [10], [11].”
• Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices (2007, background): “This thermal conductivity would correspond to a dislocation density well in excess of 10(13) cm−2 in GaN [15] and is significantly lower than the thermal conductivity of polycrystalline GaN (∼15 W · m−1 · K−1) [17], more similar to the one measured for AlN films sputtered on Si [3].”