Temperature measurements of semiconductor devices - a review

By David L. Blackburn. Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545), 2004

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Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review (2012, methodology): “Three main methods are currently used to evaluate the temperature of power semiconductor devices [2]:”
In Situ Diagnostics and Prognostics of Solder Fatigue in IGBT Modules for Electric Vehicle Drives (2015, background): “A common alternative is to measure the temperature sensitive electrical parameters (TSEPs) [46]–[48].”
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures (2006, methodology): “where ω0 is phonon frequency at 0 K, T is the temperature, kB and are Boltzmann and Planck constants, respectively, A and B are material-dependent fitting parameters [11], [28]–[31].”
IGBT Junction Temperature Measurement via Peak Gate Current (2016, background): “threshold voltage, junction temperature measurements can be performed on standard power modules without modification to their structure [5]–[7].”
Silicon diode temperature sensors - A review of applications (2015, background): “[12] and Blackburn [13] have consolidated various measurement techniques for temperature sensing in ICs.”