Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

By P. Klein, S. Binari, K. Ikossi, A. Wickenden, D. Koleske, R. Henry. 2001

276 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5cbc86e531c8428c1b76aaec90650b1cdcd084d1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Michael J. Uren
2. Martin Kuball
3. Thomas E. Kazior
4. Jungwoo Joh
5. J. D. del Alamo

In Electrical and Electronic Engineering

1. Michael J. Uren
2. Martin Kuball
3. Thomas E. Kazior
4. P. Klein
5. Jungwoo Joh
6. J. D. del Alamo

Citations in the corpus

• Trapping effects in GaN and SiC microwave FETs (2002, methodology): “Dependence of the areal concentrations of traps associated with current collapse on the OMVPE growth pressure [44].”
• Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (2007, background): “effects are threshold voltage shift [5], [16], current collapse [1], [2], [4], [5], [7]–[9], [11], [12], [14]–[16], reduction of”
• Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012, background): “In reality, C is a common contaminant in MOCVD growth, so it is likely that Fe-doped buffers will also include C [16].”