Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

By J. Pomeroy, M. Bernardoni, D. Dumka, D. Fanning, Martin Kuball. 2014

168 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d6175f7ff682a4d3e049291b0df6e4fec3cacd40

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In Materials Chemistry

1. Marko J. Tadjer

Citations in the corpus

• Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, background): “Chao et al demonstrated a GaN-on-diamond HEMT with power density over three times greater than that of a GaN-on-SiC HEMT with the same active area [116].”