Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

By Martin Kuball. 2001

386 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/1842390768b105a5c9f62e88b2762f8befc002bb

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Martin Kuball
2. Michael J. Uren
3. R. Balmer
4. B. T. Hughes
5. J. Birbeck
6. J. Hayes
7. I. Martin
8. David L. Blackburn

In Electrical and Electronic Engineering

1. Martin Kuball
2. Michael J. Uren
3. R. Balmer
4. B. T. Hughes
5. J. Birbeck
6. J. Hayes
7. I. Martin
8. David L. Blackburn

In Mechanics of Materials

1. R. Balmer
2. J. Birbeck
3. Michael J. Uren
4. J. Hayes
5. B. T. Hughes
6. I. Martin

Citations in the corpus

• Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy (2002, positive): “spectroscopy [6], taking advantage of the recent development of high light-throughput micro-Raman systems [7].”