Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
By M. Silvestri, Michael J. Uren, Martin Kuball. Applied Physics Letters, 2013
143 citations recorded by the source corpus.
Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the conduction band and a capture cross section of 10−13 cm2 were obtained. The approach presented in this work avoids the non-equilibrium electrical or optical techniques that have been used to date and extracts the device relevant trap characteristics in short channel AlGaN/GaN HEMTs. Quantitative prediction of the trap induced transconductance dispersion in HEMTs is demonstrated.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/267897cfe2af157670c1d6ca485cebaa1356a29d
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, background): “Nitrogen anti-site native point defect [31], [34] and foreign impurities and dopants (C [40], Si [47], Mg-H complex [32], Fe [96]) have been also reported.”
- Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014, methodology): “7 eV [8]–[10], based on dynamic transconductance (gm- f ) measurements, and capacitance- or current-deep level transient spectroscopy.”