Michael J. Uren
Condensed Matter Physics · 2002–2018
A researcher in the Science corpus: 8 papers; trusts 2 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 46 citations into it; #1,514 of 1,948 by trust here, #414 by citations
- Electrical and Electronic Engineering — 45 citations into it; #12,698 of 16,539 by trust here, #5,345 by citations
- Materials Chemistry — 9 citations into it
Whom Michael J. Uren trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Michael J. Uren overall
Papers from Michael J. Uren's perspective
Ordered by how strongly the researchers Michael J. Uren trusts endorse each paper. Same corpus, a different order for every researcher.
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
- Punch-through in short-channel AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
- Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
- AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$ (IEEE Transactions on Electron Devices)
- Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
- Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
- 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
- Modeling and Measuring the Effect of Refraction on the Depth Resolution of Confocal Raman Microscopy
- Temperature measurements of semiconductor devices - a review (Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545))
Their papers
- Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy (2003) — 189 citations
- Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy (2002) — 356 citations
- Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures (2006) — 249 citations
- Punch-through in short-channel AlGaN/GaN HFETs (2006) — 216 citations
- Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012) — 309 citations
- The 2018 GaN power electronics roadmap (2018) — 1,106 citations
- Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section (2013) — 143 citations
- High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications (2008) — 181 citations