Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

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Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures (2006, methodology): “As was reported in [25] and [26], the temperature on the surface of AlGaN/GaN HFETs is higher than the average tem-”
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013, neutral): “2261072 pure thermal models [2], [6], [7].”
Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (2010, background): “More details on optical techniques can be found in [7] and [8].”
Temperature measurements of semiconductor devices - a review (2004, methodology): “The spatial resolution of the Raman effect for measuring the temperature has been claimed to be 1 μm [55] and the temperature resolution 1-2 °C [56].”
Thermal resistance calculation of AlGaN-GaN devices (2004, neutral): “One of the most accurate means, showing excellent agreement with experiment [ 14 ], of calculating thermal resistance, heat flux, and temperature is through the use of sophisticated finite-element programs.”