Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
By Michael J. Uren, J. Moreke, Martin Kuball. IEEE Transactions on Electron Devices, 2012
309 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/1af2abec89e60677f951f3da9fe7cdd14675c568
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
- Gaudenzio Meneghesso
- Matteo Meneghini
- Enrico Zanoni
- Shu Yang
- Kuang Sheng
- Shaowen Han
- Kevin J. Chen
- Alessandro Chini
In Electrical and Electronic Engineering
- Matteo Meneghini
- Gaudenzio Meneghesso
- Enrico Zanoni
- Shu Yang
- Kuang Sheng
- Kevin J. Chen
- Alessandro Chini
- Shaowen Han
Citations in the corpus
- Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014, background): “in [4], which indicated only a small variation in dispersion for varying Fe doping profile; this difference is possibly due to differences in doping profile, sample geometry and electric field distribution between the samples analyzed in [4] and in this paper.”
- Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “hole current flow in the C-doped GaN layer in a threeterminal GaN transistor was first identified in [51] and has been experimentally demonstrated in [52].”