Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

By A. Manoi, J. Pomeroy, N. Killat, Martin Kuball. IEEE Electron Device Letters, 2010

169 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/968e37a26bcdad55577c0e0225b4f44ff4188a15

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In Materials Chemistry

1. Marko J. Tadjer

Citations in the corpus

• Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective (2023, methodology): “Manoi et al suggested that optimization of the AlN nucleation layer contributed to the effective TBR in GaN-on-SiC HEMTs because an additional 10%–40% temperature rise was possible with an AlN layer in GaN HEMTs depending on the composition of the nucleation layer in the GaN microstructure [172].”